Principal/Senior Principal Engineer Microelectronic Semiconductors

RELOCATION ASSISTANCE: Relocation assistance may be available CLEARANCE REQUIRED FOR START: No CLEARANCE TYPE: None TRAVEL: Yes, 10% of the Time Description At Northrop Grumman, our employees have incredible opportunities to work on revolutionary systems that impact people's lives around the world today, and for generations to come. Our pioneering and inventive spirit has enabled us to be at the forefront of many technological advancements in our nation's history - from the first flight across the Atlantic Ocean, to stealth bombers, to landing on the moon. We look for people who have bold new ideas, courage and a pioneering spirit to join forces to invent the future, and have fun along the way. Our culture thrives on intellectual curiosity, cognitive diversity and bringing your whole self to work — and we have an insatiable drive to do what others think is impossible. Our employees are not only part of history, they're making history. The Northrop Grumman Microelectronics Center (NGMC) has an opening for a Microelectronics Device Engineer to join our team of qualified, diverse individuals at our Space Park Foundry (SPF) location in Redondo Beach, CA. In the NGMC we design, manufacture, and test semiconductor products for internal and commercial production customers as well as emerging technology programs. The SPF semiconductor foundry has unique capabilities supporting a range of production microelectronics technologies (Gallium Arsenide, Indium Phosphide, and Gallium Nitride). SPF provides leading edge technology development in semiconductor materials, processes, devices, and 3D heterogeneous integration (3DHI). SPF’s discriminating technological capabilities enable many of Northrop Grumman’s ground, avionic, and space systems.  The selected candidate will support the research and development of advanced microelectronics products for the Northrop Grumman Microelectronics Center. Candidate will be responsible for leading the development and maturation of novel III-V semiconductor technologies including, but not limited to, advanced GaN HEMT technology nodes. Candidate will be responsible for advancing new technologies from early research and development through production. The ideal candidate will be able to thrive in fast-paced, multidisciplinary teams. Responsibilities will include mmW transistor design and simulation, experimental device development, root cause analysis, and RF device characterization. Candidate must be comfortable in a lab environment and be able to collaborate closely with process engineers, circuit designers, and test engineers. The selected candidate should have demonstrable subject matter expertise in semiconductor device physics and device development, with an emphasis on transistor devices. This requisition may be filled as a Principal Microelectronics Device Engineer or Senior Principal Microelectronics Device Engineer Basic Qualifications for Principal Microelectronics Device Engineer: Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or other related STEM discipline with 5 years of relevant experience (3 years with a Master’s degree and 0 with a PhD). Experience with semiconductor device processing, including High Electron Mobility Transistor (HEMTs) and Heterojunction Bipolar Transistor (HBTs) Expertise in semiconductor device physics Proficiency in Design-of-Experiments methodologies Ability to obtain and maintain a DoD Secret clearance US Citizenship required Basic Qualifications for Senior Principal Microelectronics Device Engineer: Bachelor of Science in Electrical Engineering, Chemical Engineering, Materials Engineering, Chemistry, Physics or other related STEM discipline with 8 years of relevant experience (6 years with a Master’s degree and 3 with a PhD). Experience with semiconductor device processing, including High Electron Mobility Transistor (HEMTs) and Heterojunction Bipolar Transistor (HBTs) Expertise in