Sr HBM Design Architect, PhD NCG

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. HBM Memory Design Architect Our vision is to transform how the world uses information to enrich life for all. Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners. The solutions we build help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity, sustainability, and giving back to our communities. Because doing so can fuel the very innovation we are pursuing. For more than 43 years, Micron Technology, Inc. has redefined innovation with the world’s most advanced memory and semiconductor technologies. We’re an international team of visionaries and scientists, developing groundbreaking technologies that are transforming how the world uses information to enrich life.   As an HBM Memory Design Engineer in the HBM architect team you will be responsible for designing and analyzing digital and analog circuits used in the development of memory products. This includes simulating, optimizing and floor planning DRAM circuits. You will need to have the ability to evaluate Full chip or block level functionality and provide solutions to help delivery of functionally correct design. You will work with a highly innovative and motivated design team using state of the art memory technologies to develop the most advanced HBM products.  Responsibilities will include, but are not limited to: •    Possess knowledge in one or more areas such as DRAM circuit design, high-speed clocking and interface development, logic and custom circuit design, power delivery optimization, CMOS & semiconductor device physics. •    Evaluate full chip or block level functionality and provide solutions to ensure the delivery of a functionally correct design. •    Have a good understanding of timing/area/power/complexity trade-offs in high-speed DRAM or mixed-signal design. •    Conduct pathfinding to explore new architectures for future HBM products and make recommendations after performing highly technical feasibility analyses. •    Contribute to the development of new HBM product opportunities by assisting with the overall design, layout, and optimization of Memory, Logic, and Analog circuits. •    Conduct research and design leveraging AI Successful candidates for this position will have: •    Extensive knowledge of CMOS Circuit Design and Device Physics. •    Extensive knowledge of schematic entry and simulation using Finesim and/or Hspice. •    Design or Verification or layout experience of DRAM product (DDR, LPDDR, HBM, CIM) is a plus. •    Excellent problem-solving and analytical skills. •    A self-motivated, enthusiastic team player who enjoys working with others. •    Good communication skills with the ability to convey complex technical concepts to other design and verification peers in verbal and written form. Required Experience •    NCG Ph.D or NCG Master with relevant prior experience.   Job title and level can scale depending on experience and qualifications The US base salary range that Micron Technology estimates it could pay for this full-time position is: $97,000.00 - $205,000.00 a year Additional compensation may include benefits, bonuses and equity. Our salary ranges are determined by role, level, and location. The range displayed on each job posting reflects the minimum and maximum target base pay for new hire salaries of the position across all US locations. Within the range, individual pay is determined by work location and additional job-related factors, including knowledge, skills, experience, tenure and