Intern - F10 CVD PEE

Our vision is to transform how the world uses information to enrich life for all. Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners. The solutions we build help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity, sustainability, and giving back to our communities. Because doing so can fuel the very innovation we are pursuing. Department Thin Films Process Engineering (Chemical Vapor Deposition) Project Title Crater Defect Reduction in Tetraethyl Orthosilicate (TEOS) Chemical Vapor Deposition Process Project Description Crater defects observed in the Tetraethyl Orthosilicate (TEOS) Chemical Vapor Deposition (CVD) process pose yield and integration risks in high‑volume semiconductor manufacturing. This internship project focuses on developing a structured understanding of crater defect mechanisms by integrating process knowledge, chamber condition review, and manufacturing data analytics. The intern will work on a defined engineering problem and apply data‑driven methodologies and controlled experimentation to identify defect contributors and evaluate improvement opportunities within the Fab10 TEOS CVD process. Objective of the Project Build a fundamental understanding of the TEOS CVD process flow and chamber condition effects Apply data analysis techniques to characterize crater defect signatures and trends Develop hypothesis‑driven insights linking process conditions to defect formation Evaluate defect reduction opportunities while maintaining critical film performance requirements Project Scope Study TEOS CVD process flow, equipment configuration, and chamber condition history Analyze inline defect inspection data and yield data to characterize crater defect patterns Perform structured data analysis to identify key process and equipment variables correlated with defects Conduct limited, well‑defined experiments (DOE or split runs) under Process Engineering Excellence (PEE) guidance Assess defect improvement results against key film performance metrics (e.g., thickness, uniformity, electrical properties) Learning Opportunities Hands‑on exposure to semiconductor thin‑film CVD processes in a high‑volume manufacturing environment Application of structured problem‑solving and statistical data analysis in real manufacturing scenarios Experience in defect characterization, DOE methodology, and engineering trade‑off evaluation Development of technical communication skills through data reviews and project presentations Deliverables Defect characterization summary with data‑driven insights on crater defect mechanisms Analysis package correlating process parameters and chamber conditions to defect behavior Experimental results demonstrating defect reduction opportunities with assessment of impact on critical film metrics Final technical presentation and written summary documenting findings and recommendations Impact of Project Identification of actionable defect reduction opportunities for the TEOS CVD process Improved understanding of process‑defect interactions to support yield and integration robustness Reusable analytical framework for future defect investigations   Skillset Required Data analysis and basic statistical analysis skills Structured problem‑solving mindset Ability to work with large datasets and derive engineering insights Clear written and verbal technical communication skills Strong curiosity and willingness to learn semiconductor manufacturing processes Course of Interest Chemical Engineering, Materials Science, Electrical Engineering, Mechanical Engineering, Data Analytics, or related engineering disciplines Duration Period:   M in   6   months (Semester Internship from July 2026 to   December   2026) About Micron Technology, Inc. We are an industry leader in innovative memory and storage solutions transforming